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R6025JNZ4C13

R6025JNZ4C13

MOSFET N-CH 600V 25A TO247G

R6025JNZ4C13

R6025JNZ4C13

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Part No :

R6025JNZ4C13

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 600V 25A TO247G
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10630 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:182mOhm @ 12.5A, 15V
Vgs(th) (Max) @ Id:7V @ 4.5mA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 15 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 100 V
FET Feature:-
Power Dissipation (Max):306W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247G
Package / Case:TO-247-3
R6025JNZ4C13 is available at GangBo-ic.com, Please review product page below for detailed information, including R6025JNZ4C13 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for R6025JNZ4C13 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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