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SIS106DN-T1-GE3

SIS106DN-T1-GE3

MOSFET N-CH 60V 9.8A/16A PPAK

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SIS106DN-T1-GE3

SIS106DN-T1-GE3

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Part No :

SIS106DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 60V 9.8A/16A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14513 pieces
Shipped from
HK warehouse
Expected Shipping Date
Apr 18 - Apr 22 2025
PDF
SIS106DN-T1-GE3 PDF
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:9.8A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Rds On (Max) @ Id, Vgs:18.5mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:540 pF @ 30 V
FET Feature:-
Power Dissipation (Max):3.2W (Ta), 24W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8
Package / Case:PowerPAK® 1212-8
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