MOSFET N-CH 30V 3.5A TUMT6
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 56mOhm @ 3.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 6.4 nC @ 4.5 V |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | 350 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 1W (Ta) |
Operating Temperature: | 150°C |
Mounting Type: | Surface Mount |
Supplier Device Package: | TUMT6 |
Package / Case: | 6-SMD, Flat Leads |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AON7409Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 16A/32A 8DFN |
|
NTP27N06GRochester Electronics |
MOSFET N-CH 60V 27A TO220AB |
|
FDU8796Rochester Electronics |
MOSFET N-CH 25V 35A IPAK |
|
SUP60030E-GE3Vishay / Siliconix |
MOSFET N-CH 80V 120A TO220AB |
|
BSP322PL6327HTSA1Rochester Electronics |
MOSFET P-CH 100V 1A SOT223-4 |
|
IRF9Z30PBFVishay / Siliconix |
MOSFET P-CH 50V 18A TO220AB |
|
IAUZ40N10S5N130ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 40A 8TSDSON-33 |
|
IPG20N06S2L-35AATMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMN67D7L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 210MA SOT23-3 |
|
IPB100N08S207ATMA1Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
STD11N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 7.5A DPAK |
|
IRF4104PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 75A TO220AB |
|
SIRA88DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 45.5A PPAK SO-8 |