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RF4E070BNTR

RF4E070BNTR

MOSFET N-CH 30V 7A HUML2020L8

QXPBCLCLXX20

QXPBCLCLXX20

CABLE ASSEMBLY

RF4E070BNTR

RF4E070BNTR

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Part No :

RF4E070BNTR

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 30V 7A HUML2020L8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10860 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 23 - Feb 27 2025
PDF
RF4E070BNTR PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:28.6mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:410 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:HUML2020L8
Package / Case:8-PowerUDFN
RF4E070BNTR is available at GangBo-ic.com, Please review product page below for detailed information, including RF4E070BNTR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RF4E070BNTR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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