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TSM130NB06LCR RLG

TSM130NB06LCR RLG

MOSFET N-CH 60V 10A/51A 8PDFN

TSM130NB06LCR RLG

TSM130NB06LCR RLG

Image is for reference, please contact us to get the real picture

Part No :

TSM130NB06LCR RLG

Manufacturer
TSC (Taiwan Semiconductor)
Description
MOSFET N-CH 60V 10A/51A 8PDFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14744 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
TSM130NB06LCR RLG PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2175 pF @ 30 V
FET Feature:-
Power Dissipation (Max):3.1W (Ta), 83W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PDFN (5x6)
Package / Case:8-PowerTDFN
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