IPP80N06 - 55V-60V N-CHANNEL AUT
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AOY66923Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 16.5/58A TO251B |
|
IRF9Z14LPBFVishay / Siliconix |
MOSFET P-CH 60V 6.7A I2PAK |
|
5HN01M-TL-E-SARochester Electronics |
MOSFET N-CH 50V 100MA MCP |
|
SPA16N50C3Rochester Electronics |
SPA16N50 - 500V COOLMOS N-CHANNE |
|
FQPF2N60CRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
PSMN038-100YLXNexperia |
MOSFET N-CH 100V 30A LFPAK56 |
|
IRFW644BTMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSZ340N08NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 6A/23A 8TSDSON |
|
HUF75645P3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 75A TO220-3 |
|
SI7617DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 35A PPAK1212-8 |
|
PHB33NQ20T,118Nexperia |
MOSFET N-CH 200V 32.7A D2PAK |
|
FDB8444-F085Rochester Electronics |
70A, 40V, 9.9OHM, N-CHANNEL, MO |
|
MMBF170Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 500MA SOT23 |