RES SMD 1.65K OHM 1/10W 0603
MOSFET N-CH 100V 4.3A DPAK
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 4.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 540mOhm @ 2.6A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.3 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 180 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-PAK (TO-252AA) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRF1407STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 100A D2PAK |
|
FDMS015N04BRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 3 |
|
PMZ320UPEYLNexperia |
MOSFET P-CH 30V 1A DFN1006-3 |
|
TSM480P06CH X0GTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 60V 20A TO251 |
|
STD70N10F4STMicroelectronics |
MOSFET N-CH 100V 60A DPAK |
|
BSP316PL6327Rochester Electronics |
P-CHANNEL MOSFET |
|
IPI80N04S2H4AKSA2Rochester Electronics |
MOSFET N-CH 40V 80A TO262-3 |
|
ZXMN10A08GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 2A SOT223 |
|
IRF9328TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 12A 8SO |
|
IXFX220N17T2Wickmann / Littelfuse |
MOSFET N-CH 170V 220A PLUS247-3 |
|
STD18N60M6STMicroelectronics |
MOSFET N-CH 600V 13A DPAK |
|
SSM6J501NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 10A 6UDFNB |
|
PMF250XN,115Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |