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TK10J80E,S1E

TK10J80E,S1E

MOSFET N-CH 800V 10A TO3P

TK10J80E,S1E

TK10J80E,S1E

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Part No :

TK10J80E,S1E

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 800V 10A TO3P
Catalog
Transistors - FETs, MOSFETs - Single
Availability
518951 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
TK10J80E,S1E PDF
Type Description
Series:π-MOSVIII
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 25 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P(N)
Package / Case:TO-3P-3, SC-65-3
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