MOSFET N CH 800V 6A DPAK
Type | Description |
---|---|
Series: | SuperMESH5™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800 V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 950mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 16.5 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 450 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 110W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AUIRFP064NRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
IPD60R180C7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 13A TO252-3 |
|
BSS225H6327FTSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 90MA SOT89 |
|
FDD390N15ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 26A DPAK |
|
UPA2803T1L-E2-AYRochester Electronics |
MOSFET N-CH 20V 20A 8DFN |
|
FQU7N20TURochester Electronics |
MOSFET N-CH 200V 5.3A IPAK |
|
IXFT150N17T2Wickmann / Littelfuse |
MOSFET N-CH 175V 150A TO268HV |
|
IPD30N06S2L13ATMA1Rochester Electronics |
IPD30N06 - 55V-60V N-CHANNEL AUT |
|
SIJH440E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 200A PPAK 8 X 8 |
|
IXFQ72N30X3Wickmann / Littelfuse |
MOSFET N-CH 300V 72A TO3P |
|
FQD13N06LTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 11A DPAK |
|
BSN20-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 50V 500MA SOT23 |
|
IRFB7540PBFIR (Infineon Technologies) |
MOSFET N-CH 60V 110A TO220 |