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IPS80R1K4P7AKMA1

IPS80R1K4P7AKMA1

MOSFET N-CH 800V 4A TO251-3

IPS80R1K4P7AKMA1

IPS80R1K4P7AKMA1

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Part No :

IPS80R1K4P7AKMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 800V 4A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
178617 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 01 - Feb 05 2025
PDF
IPS80R1K4P7AKMA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id:3.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:Super Junction
Power Dissipation (Max):32W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Stub Leads, IPak
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