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FQPF3N80

FQPF3N80

MOSFET N-CH 800V 1.8A TO220F

FQPF3N80

FQPF3N80

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Part No :

FQPF3N80

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 800V 1.8A TO220F
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13682 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
FQPF3N80 PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:690 pF @ 25 V
FET Feature:-
Power Dissipation (Max):39W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack
FQPF3N80 is available at GangBo-ic.com, Please review product page below for detailed information, including FQPF3N80 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQPF3N80 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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