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SQJQ466E-T1_GE3

SQJQ466E-T1_GE3

MOSFET N-CH 60V 200A PPAK 8 X 8

SQJQ466E-T1_GE3

SQJQ466E-T1_GE3

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Part No :

SQJQ466E-T1_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 60V 200A PPAK 8 X 8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12212 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
SQJQ466E-T1_GE3 PDF
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:200A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:10210 pF @ 25 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 8 x 8
Package / Case:8-PowerTDFN
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