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FQPF7N65C

FQPF7N65C

MOSFET N-CH 650V 7A TO220F

FQPF7N65C

FQPF7N65C

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Part No :

FQPF7N65C

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 650V 7A TO220F
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19990 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
FQPF7N65C PDF
Type Description
Series:*
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1.245 pF @ 25 V
FET Feature:-
Power Dissipation (Max):52W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack
FQPF7N65C is available at GangBo-ic.com, Please review product page below for detailed information, including FQPF7N65C price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQPF7N65C to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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