MOSFET P-CH 60V 2.3A SOT26
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 2.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 125mOhm @ 2.3A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17.7 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 637 pF @ 30 V |
FET Feature: | - |
Power Dissipation (Max): | 1.1W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-26 |
Package / Case: | SOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDMA291PRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
IXFX150N30P3Wickmann / Littelfuse |
MOSFET N-CH 300V 150A PLUS247-3 |
|
STFI40N60M2STMicroelectronics |
MOSFET N-CH 600V 34A I2PAKFP |
|
NTMFS5H610NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 12A 44A 5DFN |
|
NTMS7N03R2GRochester Electronics |
MOSFET N-CH 30V 4.8A 8SOIC |
|
FQB17P10TMRochester Electronics |
MOSFET P-CH 100V 16.5A D2PAK |
|
DMP3056L-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 4.3A SOT23 |
|
RQ5E065AJTCLROHM Semiconductor |
MOSFET N-CH 30V 6.5A TSMT3 |
|
SPP18P06PHXKSA1IR (Infineon Technologies) |
MOSFET P-CH 60V 18.7A TO220-3 |
|
PSMN5R4-25YLDXNexperia |
MOSFET N-CH 25V 70A LFPAK56 |
|
IRF7416TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 10A 8SO |
|
DMN3060LCA3-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 3.9A X4DSN1006-3 |
|
DMP1005UFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 26A 6UDFN |