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STL19N60M2

STL19N60M2

MOSFET N-CH 600V 11A PWRFLAT HV

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STL19N60M2

STL19N60M2

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Part No :

STL19N60M2

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 11A PWRFLAT HV
Catalog
Transistors - FETs, MOSFETs - Single
Availability
067706 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
STL19N60M2 PDF
Type Description
Series:MDmesh™ M2
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:791 pF @ 100 V
FET Feature:-
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (8x8) HV
Package / Case:8-PowerVDFN
STL19N60M2 is available at GangBo-ic.com, Please review product page below for detailed information, including STL19N60M2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STL19N60M2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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