MOSFET N-CH 640V 5A DPAK
Type | Description |
---|---|
Series: | MDmesh™ II |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 640 V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.05Ohm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 14 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 363 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 60W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RS3E075ATTBROHM Semiconductor |
MOSFET P-CH 30V 8SOP |
|
STF10P6F6STMicroelectronics |
MOSFET P-CH 60V 10A TO220FP |
|
IXTP90N055T2Wickmann / Littelfuse |
MOSFET N-CH 55V 90A TO220AB |
|
PMPB13XNE,115Rochester Electronics |
MOSFET N-CH 30V 8A DFN2020MD-6 |
|
DMP21D0UT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 590MA SOT523 |
|
FDS6614ARochester Electronics |
MOSFET N-CH 30V 9.3A 8SOIC |
|
EPC2036EPC |
GANFET N-CH 100V 1.7A DIE |
|
AON7534Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 20A/30A 8DFN |
|
SIHD6N65ET4-GE3Vishay / Siliconix |
MOSFET N-CH 650V 7A TO252AA |
|
IPB017N10N5LFATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 180A TO263-7 |
|
NVMFS6H864NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 6.7A/21A 5DFN |
|
DN3525N8-GRoving Networks / Microchip Technology |
MOSFET N-CH 250V 360MA TO243AA |
|
NTMS4503NR2GRochester Electronics |
MOSFET N-CH 28V 9A 8SOIC |