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IXTA1N170DHV

IXTA1N170DHV

MOSFET N-CH 1700V 1A TO263

IXTA1N170DHV

IXTA1N170DHV

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Part No :

IXTA1N170DHV

Manufacturer
Wickmann / Littelfuse
Description
MOSFET N-CH 1700V 1A TO263
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10161 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
IXTA1N170DHV PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1700 V
Current - Continuous Drain (Id) @ 25°C:1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:16Ohm @ 500mA, 0V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:47 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3090 pF @ 25 V
FET Feature:Depletion Mode
Power Dissipation (Max):290W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTA1N170DHV is available at GangBo-ic.com, Please review product page below for detailed information, including IXTA1N170DHV price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IXTA1N170DHV to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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