MOSFET N-CH 500V 35A TO247
Type | Description |
---|---|
Series: | POWER MOS 7® |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 140mOhm @ 17.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 72 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 3261 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 403W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 [B] |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NVB5860NT4GRochester Electronics |
MOSFET N-CH 60V 220A D2PAK-3 |
|
STI260N6F6STMicroelectronics |
MOSFET N-CH 75V 120A I2PAK |
|
DMTH8008SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 80V 92A PWRDI5060-8 |
|
IRF540NSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 33A D2PAK |
|
IRF143Rochester Electronics |
MOSFET N-CH 60V 24A TO3 |
|
NTMS4802NR2GRochester Electronics |
MOSFET N-CH 30V 11.1A 8SOIC |
|
BUK9M120-100EXNexperia |
MOSFET N-CH 100V 11.5A LFPAK33 |
|
SSM6J414TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P CH 20V 6A UF6 |
|
STD5N95K5STMicroelectronics |
MOSFET N-CH 950V 3.5A DPAK |
|
PSMN4R3-40MLHXNexperia |
MOSFET N-CH 40V 95A LFPAK33 |
|
TJ50S06M3L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 50A DPAK |
|
STF19NM50NSTMicroelectronics |
MOSFET N-CH 500V 14A TO220FP |
|
DMT12H090LFDF4-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 115V 3.4A 6DFN |