MOSFET P-CH 100V 8A TO220-3
Type | Description |
---|---|
Series: | QFET® |
Package: | Tube |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 530mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 470 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 65W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTD5862N-1GRochester Electronics |
MOSFET N-CH 60V 98A DPAK |
|
STD9NM60NSTMicroelectronics |
MOSFET N-CH 600V 6.5A DPAK |
|
FDS2734Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 3A 8SOIC |
|
SI4630DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 40A 8SO |
|
TSM015NA03CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 205A 8PDFN |
|
FDG313NRochester Electronics |
0.95A, 25V, N-CHANNEL, MOSFET |
|
STP10N95K5STMicroelectronics |
MOSFET N-CH 950V 8A TO220 |
|
ZXMN3A03E6TAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 3.7A SOT-23-6 |
|
BUZ111SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF7413TRPBFRochester Electronics |
MOSFET N-CH 30V 13A 8SO |
|
IPB022N04LGATMA1Rochester Electronics |
MOSFET N-CH 40V 90A D2PAK |
|
BSC036NE7NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 75V 100A TDSON |
|
HUF75542P3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 75A TO220-3 |