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FDB050AN06A0

FDB050AN06A0

MOSFET N-CH 60V 18A/80A D2PAK

CDDS75N

CDDS75N

DEEP SOCKET,1/2" DRIVE,16MM,6PT

FDB050AN06A0

FDB050AN06A0

Image is for reference, please contact us to get the real picture

Part No :

FDB050AN06A0

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 60V 18A/80A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
927292 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
FDB050AN06A0 PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3900 pF @ 25 V
FET Feature:-
Power Dissipation (Max):245W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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