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NTMFS4H02NFT1G

NTMFS4H02NFT1G

MOSFET N-CH 25V 37A/193A 5DFN

NTMFS4H02NFT1G

NTMFS4H02NFT1G

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Part No :

NTMFS4H02NFT1G

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 25V 37A/193A 5DFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
44430 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
NTMFS4H02NFT1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:37A (Ta), 193A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2.652 pF @ 12 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 83W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN
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