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IRF7473PBF

IRF7473PBF

HEXFET POWER MOSFET

IRF7473PBF

IRF7473PBF

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Part No :

IRF7473PBF

Manufacturer
Rochester Electronics
Description
HEXFET POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10611 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
IRF7473PBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:6.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:26mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:61 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3.18 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
IRF7473PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF7473PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF7473PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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