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SIS606BDN-T1-GE3

SIS606BDN-T1-GE3

MOSFET N-CH 100V 9.4A/35.3A PPAK

SIS606BDN-T1-GE3

SIS606BDN-T1-GE3

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Part No :

SIS606BDN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 100V 9.4A/35.3A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11667 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
SIS606BDN-T1-GE3 PDF
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:9.4A (Ta), 35.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Rds On (Max) @ Id, Vgs:17.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1470 pF @ 50 V
FET Feature:-
Power Dissipation (Max):3.7W (Ta), 52W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8
Package / Case:PowerPAK® 1212-8
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