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FDPF041N06BL1

FDPF041N06BL1

POWER FIELD-EFFECT TRANSISTOR, 7

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FDPF041N06BL1

FDPF041N06BL1

Image is for reference, please contact us to get the real picture

Part No :

FDPF041N06BL1

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
23853 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
FDPF041N06BL1 PDF
Type Description
Series:PowerTrench®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:77A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.1mOhm @ 77A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:69 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5.69 pF @ 30 V
FET Feature:-
Power Dissipation (Max):44.1W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack
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GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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