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STB26N60M2

STB26N60M2

MOSFET N-CHANNEL 600V 20A D2PAK

STB26N60M2

STB26N60M2

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Part No :

STB26N60M2

Manufacturer
STMicroelectronics
Description
MOSFET N-CHANNEL 600V 20A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
647064 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 01 - Dec 05 2024
PDF
STB26N60M2 PDF
Type Description
Series:MDmesh™ M2
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:165mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1360 pF @ 100 V
FET Feature:-
Power Dissipation (Max):169W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STB26N60M2 is available at GangBo-ic.com, Please review product page below for detailed information, including STB26N60M2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STB26N60M2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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