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FQD6N60CTM-WS

FQD6N60CTM-WS

MOSFET N-CH 600V 4A DPAK

FQD6N60CTM-WS

FQD6N60CTM-WS

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Part No :

FQD6N60CTM-WS

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 600V 4A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
457045 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 02 - Feb 06 2025
PDF
FQD6N60CTM-WS PDF
Type Description
Series:QFET®
Package:Tape & Reel (TR)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:810 pF @ 25 V
FET Feature:-
Power Dissipation (Max):80W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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