POWER FIELD-EFFECT TRANSISTOR, 6
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 67A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 8.2mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 14 nC @ 5 V |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | 1400 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | Surface Mount |
Supplier Device Package: | LFPAK56, Power-SO8 |
Package / Case: | SC-100, SOT-669 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
APT58F50JRoving Networks / Microchip Technology |
MOSFET N-CH 500V 58A ISOTOP |
|
FCP170N60Rochester Electronics |
MOSFET N-CH 600V 22A TO220-3 |
|
NTLUS3A18PZCTAGRochester Electronics |
MOSFET P-CH 20V 5.1A 6UDFN |
|
IPP50R399CPXKSA1Rochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
RM100N30DFRectron USA |
MOSFET N-CHANNEL 30V 100A 8DFN |
|
DMTH43M8LFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V PWRDI3333 |
|
IPL60R210P6AUMA1Rochester Electronics |
MOSFET N-CH 600V 19.2A 4VSON |
|
FQPF47P06Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 30A TO220F |
|
IPP062NE7N3GRochester Electronics |
IPP062NE7 - 12V-300V N-CHANNEL P |
|
STP7N95K3STMicroelectronics |
MOSFET N-CH 950V 7.2A TO220-3 |
|
IRF1310NSPBF-INFRochester Electronics |
HEXFET POWER MOSFET |
|
PMV40UN,215Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
STS4DNFS30STMicroelectronics |
MOSFET N-CH 30V 4.5A 8SO |