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IPT60R080G7XTMA1

IPT60R080G7XTMA1

MOSFET N-CH 650V 29A 8HSOF

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IPT60R080G7XTMA1

IPT60R080G7XTMA1

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Part No :

IPT60R080G7XTMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 29A 8HSOF
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12042 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IPT60R080G7XTMA1 PDF
Type Description
Series:CoolMOS™ G7
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:80mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id:4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1640 pF @ 400 V
FET Feature:-
Power Dissipation (Max):167W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOF-8-2
Package / Case:8-PowerSFN
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