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RU1J002YNTCL

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Part No :

RU1J002YNTCL

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 50V 200MA UMT3F
Catalog
Transistors - FETs, MOSFETs - Single
Availability
546954 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
RU1J002YNTCL PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):0.9V, 4.5V
Rds On (Max) @ Id, Vgs:2.2Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:800mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:26 pF @ 10 V
FET Feature:-
Power Dissipation (Max):150mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:UMT3F
Package / Case:SC-85
RU1J002YNTCL is available at GangBo-ic.com, Please review product page below for detailed information, including RU1J002YNTCL price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RU1J002YNTCL to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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