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IXTH1N200P3

IXTH1N200P3

MOSFET N-CH 2000V 1A TO247

IXTH1N200P3

IXTH1N200P3

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Part No :

IXTH1N200P3

Manufacturer
Wickmann / Littelfuse
Description
MOSFET N-CH 2000V 1A TO247
Catalog
Transistors - FETs, MOSFETs - Single
Availability
28600 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 01 - Feb 05 2025
PDF
IXTH1N200P3 PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):2000 V
Current - Continuous Drain (Id) @ 25°C:1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:40Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:646 pF @ 25 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
IXTH1N200P3 is available at GangBo-ic.com, Please review product page below for detailed information, including IXTH1N200P3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IXTH1N200P3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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