MEMS OSC XO 29.4912MHZ CMOS SMD
MOSFET N-CH 600V 19A TO247AC
CONN MICRO-D RCPT 9POS PNL MNT
BRACKET ASSEMBLY
Type | Description |
---|---|
Series: | E |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 180mOhm @ 9.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 33 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1085 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 156W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247AC |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BS170-D27ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 500MA TO92-3 |
|
IRL510SPBFVishay / Siliconix |
MOSFET N-CH 100V 5.6A D2PAK |
|
FQD2N50TFRochester Electronics |
MOSFET N-CH 500V 1.6A DPAK |
|
IRF7404TRPBFIR (Infineon Technologies) |
MOSFET P-CH 20V 6.7A 8SO |
|
RT1A050ZPTRROHM Semiconductor |
MOSFET P-CH 12V 5A 8TSST |
|
SSM3K56MFV,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 800MA VESM |
|
MCH3478-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 2A 3MCPH |
|
IRFS3806TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 43A D2PAK |
|
FDS8638Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 18A 8SOIC |
|
IPP034N03LGXKSA1IR (Infineon Technologies) |
MOSFET N-CH 30V 80A TO220-3 |
|
STP6NK90ZSTMicroelectronics |
MOSFET N-CH 900V 5.8A TO220AB |
|
NTMFS4C35NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 12.4A 5DFN |
|
R6018ANJTLROHM Semiconductor |
MOSFET N-CH 600V 18A LPTS |