GANFET N-CH 650V 3.6A 3PQFN
BENDING FORMER WITH SLIDE RAIL 1
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 8V |
Rds On (Max) @ Id, Vgs: | 560mOhm @ 3.4A, 8V |
Vgs(th) (Max) @ Id: | 2.8V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: | 8 V @ 8 nC |
Vgs (Max): | ±18V |
Input Capacitance (Ciss) (Max) @ Vds: | 400 V @ 760 pF |
FET Feature: | - |
Power Dissipation (Max): | 13.2W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 3-PQFN (5x6) |
Package / Case: | 3-SMD, Flat Lead |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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