MOSFET N-CH 600V 4A TO252
Type | Description |
---|---|
Series: | aMOS™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 900mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id: | 4.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 6 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 263 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 56.8W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252, (D-Pak) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
APT56M60LRoving Networks / Microchip Technology |
MOSFET N-CH 600V 60A TO264 |
|
IPP60R600E6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STP14NK50ZSTMicroelectronics |
MOSFET N-CH 500V 14A TO220AB |
|
SUD08P06-155L-GE3Vishay / Siliconix |
MOSFET P-CH 60V 8.4A TO252 |
|
SIA415DJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 12A PPAK SC70-6 |
|
SCT2080KEHRC11ROHM Semiconductor |
SICFET N-CH 1200V 40A TO247N |
|
SIR180DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 60V 32.4A/60A PPAK |
|
IRFP4004PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 195A TO247AC |
|
BUK7506-55B,127Rochester Electronics |
MOSFET N-CH 55V 75A TO220AB |
|
IPAN60R360P7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 9A TO220 |
|
IRF4104SPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 75A D2PAK |
|
BUK663R7-75C,118Rochester Electronics |
PFET, 120A I(D), 75V, 0.0058OHM, |
|
HUF75345G3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 55V 75A TO247-3 |