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IPB80N07S405ATMA1

IPB80N07S405ATMA1

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Part No :

IPB80N07S405ATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 75V 80A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
24755 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IPB80N07S405ATMA1 PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:80A (Tj)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:5.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:69 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4800 pF @ 25 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB80N07S405ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB80N07S405ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB80N07S405ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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