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NVMFS6H852NWFT1G

NVMFS6H852NWFT1G

MOSFET N-CH 80V 10A/40A 5DFN

JAN1N5535DUR-1

JAN1N5535DUR-1

DIODE ZENER 15V 500MW DO213AA

3052.0

3052.0

CABLE CUTTER

NVMFS6H852NWFT1G

NVMFS6H852NWFT1G

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Part No :

NVMFS6H852NWFT1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 80V 10A/40A 5DFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
036003 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:14.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 45µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 40 V
FET Feature:-
Power Dissipation (Max):3.6W (Ta), 54W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
NVMFS6H852NWFT1G is available at GangBo-ic.com, Please review product page below for detailed information, including NVMFS6H852NWFT1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NVMFS6H852NWFT1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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