MOSFET N-CH 20V 1A SOT23
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 100mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 180 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 500mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PSMN017-30EL,127Nexperia |
MOSFET N-CH 30V 32A I2PAK |
|
IPA075N15N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 150V 43A TO220-3 |
|
STP33N65M2STMicroelectronics |
MOSFET N-CH 650V 24A TO220 |
|
IRLL024NPBF-INFRochester Electronics |
HEXFET POWER MOSFET |
|
CSD17483F4Texas Instruments |
MOSFET N-CH 30V 1.5A 3PICOSTAR |
|
BSC120N03MSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 11A/39A TDSON |
|
SQ4425EY-T1_BE3Vishay / Siliconix |
MOSFET P-CHANNEL 30V 18A 8SOIC |
|
PMN40ENEXNexperia |
MOSFET N-CH 30V 5.7A 6TSOP |
|
IRLZ44SPBFVishay / Siliconix |
MOSFET N-CH 60V 50A D2PAK |
|
RSR010N10TLROHM Semiconductor |
MOSFET N-CH 100V 1A TSMT3 |
|
IPP60R070CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 31A TO220-3 |
|
AUIRFL024NTRRochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
SI1032R-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 140MA SC75A |