RES SMD 560K OHM 5% 3/4W 2010
AUTOMOTIVE HEXFET N CHANNEL
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 7.5mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 95 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2.84 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 140W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPB015N08N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 180A TO263-7 |
|
SIHH180N60E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 19A PPAK 8 X 8 |
|
AON7290Alpha and Omega Semiconductor, Inc. |
MOSFET N CH 100V 15A 8DFN |
|
STW25N60M2-EPSTMicroelectronics |
MOSFET N-CHANNEL 600V 18A TO247 |
|
FDD4243Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 6.7A/14A DPAK |
|
TSM036N03PQ56 RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 124A 8PDFN |
|
IXTA1N200P3HVWickmann / Littelfuse |
MOSFET N-CH 2000V 1A TO263 |
|
TJ80S04M3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 80A DPAK |
|
IRF7580MTRPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 114A DIRECTFET |
|
SIR178DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 20V 100A/430A PPAK |
|
BUK751R8-40E127Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXTH10N100D2Wickmann / Littelfuse |
MOSFET N-CH 1000V 10A TO247 |
|
STW50N65DM6STMicroelectronics |
MOSFET N-CH 650V 33A TO247-3 |