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IPD60R750E6BTMA1

IPD60R750E6BTMA1

MOSFET N-CH 600V 5.7A TO252

IPD60R750E6BTMA1

IPD60R750E6BTMA1

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Part No :

IPD60R750E6BTMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 5.7A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Availability
37500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
IPD60R750E6BTMA1 PDF
Type Description
Series:CoolMOS™ E6
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:750mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs:17.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:373 pF @ 100 V
FET Feature:-
Power Dissipation (Max):48W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-313
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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