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IRLD110PBF

IRLD110PBF

MOSFET N-CH 100V 1A 4DIP

IRLD110PBF

IRLD110PBF

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Part No :

IRLD110PBF

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 100V 1A 4DIP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15256 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IRLD110PBF PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 5V
Rds On (Max) @ Id, Vgs:540mOhm @ 600mA, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.1 nC @ 5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:4-DIP, Hexdip, HVMDIP
Package / Case:4-DIP (0.300", 7.62mm)
IRLD110PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRLD110PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRLD110PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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