MOSFET N-CH 40V 22A/108A DIRECT
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Ta), 108A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 3mOhm @ 65A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: | 108 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4.267 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta), 63W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DIRECTFET™ M4 |
Package / Case: | DirectFET™ Isometric M4 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DMN2250UFB-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 1.35A 3DFN |
|
TPS1100DTexas Instruments |
MOSFET P-CH 15V 1.6A 8SOIC |
|
G2304 |
MOSFET N-CH 30V 3.6A SOT-23 |
|
IRFH7194TRPBFRochester Electronics |
HEXFET POWER MOSFET |
|
UPA2716AGR-E1-ATRochester Electronics |
MOSFET P-CH 30V 14A 8PSOP |
|
TK9J90E,S1EToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 900V 9A TO3P |
|
IRF332Rochester Electronics |
4.5A, 400V, 1.5OHM, N-CHANNEL PO |
|
AON2409Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 8A 6DFN |
|
YJL2305A-F2-0000HF |
P-CH MOSFET 15V 5.6A SOT-23-3L |
|
DMN3110S-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 2.5A SOT-23 |
|
IPW60R060P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 48A TO247-3 |
|
IXTR210P10TWickmann / Littelfuse |
MOSFET P-CH 100V 195A ISOPLUS247 |
|
IXFT26N100XHVWickmann / Littelfuse |
MOSFET N-CH 1000V 26A TO268HV |