N-CHANNEL POWER MOSFET
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PHB21N06LT,118Nexperia |
MOSFET N-CH 55V 19A D2PAK |
|
2SK4066-DL-ERochester Electronics |
MOSFET N-CH 60V 100A SMP-FD |
|
SIS472BDN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 15.3A/38.3A PPAK |
|
PHK5NQ15T,518Nexperia |
MOSFET N-CH 150V 5A 8SO |
|
IRF9540SPBFVishay / Siliconix |
MOSFET P-CH 100V 19A D2PAK |
|
TK6P60W,RVQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 600V 6.2A DPAK |
|
TK35E10K3(S1SS-Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 35A TO-220AB |
|
SQ3481EV-T1_BE3Vishay / Siliconix |
MOSFET P-CHANNEL 30V 7.5A 6TSOP |
|
DMPH1006UPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 80A PWRDI5060-8 |
|
IRF7473TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 6.9A 8SO |
|
ZXMN6A07ZTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 1.9A SOT89-3 |
|
IPB120N08S404ATMA1Rochester Electronics |
MOSFET N-CH 80V 120A D2PAK |
|
IRLB8748PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 92A TO220AB |