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IRFZ34NSTRRPBF

IRFZ34NSTRRPBF

MOSFET N-CH 55V 29A D2PAK

IRFZ34NSTRRPBF

IRFZ34NSTRRPBF

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Part No :

IRFZ34NSTRRPBF

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 55V 29A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
605460 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
IRFZ34NSTRRPBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:40mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFZ34NSTRRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFZ34NSTRRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFZ34NSTRRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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