MOSFET N-CH 200V 5A DPAK
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 600mOhm @ 2.9A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 23 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 300 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 43W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STFI10N65K3STMicroelectronics |
MOSFET N-CH 650V 10A I2PAKFP |
|
SISS63DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 35.1/127.5A PPAK |
|
IXFX230N20TWickmann / Littelfuse |
MOSFET N-CH 200V 230A PLUS247-3 |
|
AUIRF2903ZSTRLIR (Infineon Technologies) |
MOSFET N-CH 30V 160A D2PAK |
|
SIA459EDJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 9A PPAK SC70-6 |
|
2SK1427Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NP80N04NHE-S18-AYRochester Electronics |
MOSFET N-CH 40V 80A TO262 |
|
DMP4025SFGQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 7.2A PWRDI3333-8 |
|
STB40N60M2STMicroelectronics |
MOSFET N-CH 600V 34A D2PAK |
|
IPA030N10N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 79A TO220-FP |
|
IXTT75N10Wickmann / Littelfuse |
MOSFET N-CH 100V 75A TO268 |
|
IPD30N06S2L13ATMA4Rochester Electronics |
IPD30N06 - 55V-60V N-CHANNEL AUT |
|
IRFF423Rochester Electronics |
N-CHANNEL POWER MOSFET |