MOSFET N-CH 100V 4A 6UDFN
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 62mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 5.1 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 266 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 800mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | U-DFN2020-6 (Type F) |
Package / Case: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDPF8N60ZUTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 6.5A TO220F |
|
SPS02N60C3BKMA1Rochester Electronics |
MOSFET N-CH 600V 1.8A TO251-31 |
|
FDT457NSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 5A SOT223-4 |
|
AUIRFSL8403Rochester Electronics |
MOSFET N-CH 40V 123A TO262 |
|
IPP60R160P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 20A TO220-3-1 |
|
IPB036N12N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 120V 180A TO263-7 |
|
STP10NM60NSTMicroelectronics |
MOSFET N-CH 600V 10A TO220AB |
|
SISS28DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 60A PPAK1212-8S |
|
IRLZ44NPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 47A TO220AB |
|
SIHP28N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 28A TO220AB |
|
SIHF22N60E-E3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO220 |
|
DMT6010LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 13.5A PWRDI5060 |
|
DMN2100UDM-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 3.3A SOT-26 |