PFET, 120A I(D), 100V, 0.006OHM,
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 6mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: | 170 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6.86 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 250W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
APT13F120BRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 14A TO247 |
|
FQAF28N15Rochester Electronics |
MOSFET N-CH 150V 22A TO3PF |
|
STP18N60M6STMicroelectronics |
MOSFET N-CH 600V 13A TO220 |
|
STP10N62K3STMicroelectronics |
MOSFET N-CH 620V 8.4A TO220AB |
|
STF42N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 34A TO220FP |
|
AOT282LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 80V 18.5A/105A TO220 |
|
PMZ200UNEYLNexperia |
MOSFET N-CH 30V 1.4A DFN1006-3 |
|
STL140N6F7STMicroelectronics |
MOSFET N-CH 60V 145A POWERFLAT |
|
BSP225/S911115Rochester Electronics |
P-CHANNEL MOSFET |
|
RM50N30DNRectron USA |
MOSFET N-CHANNEL 30V 50A 8DFN |
|
NTLJS17D0P03P8ZTAGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 7A 6PQFN |
|
AOI2610EAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 46A TO251A |
|
IXTA05N100HVWickmann / Littelfuse |
MOSFET N-CH 1000V 750MA TO263 |