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IPU60R1K5CEBKMA1

IPU60R1K5CEBKMA1

MOSFET N-CH 600V 3.1A TO251

W4281-10SG-3ES

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IPU60R1K5CEBKMA1

IPU60R1K5CEBKMA1

Image is for reference, please contact us to get the real picture

Part No :

IPU60R1K5CEBKMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 3.1A TO251
Catalog
Transistors - FETs, MOSFETs - Single
Availability
365136 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
IPU60R1K5CEBKMA1 PDF
Type Description
Series:CoolMOS™ CE
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:9.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 100 V
FET Feature:-
Power Dissipation (Max):28W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-251
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
IPU60R1K5CEBKMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPU60R1K5CEBKMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPU60R1K5CEBKMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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