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TJ10S04M3L(T6L1,NQ

TJ10S04M3L(T6L1,NQ

MOSFET P-CH 40V 10A DPAK

TJ10S04M3L(T6L1,NQ

TJ10S04M3L(T6L1,NQ

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Part No :

TJ10S04M3L(T6L1,NQ

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET P-CH 40V 10A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
714971 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
TJ10S04M3L(T6L1,NQ PDF
Type Description
Series:U-MOSVI
Package:Tape & Reel (TR)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:44mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds:930 pF @ 10 V
FET Feature:-
Power Dissipation (Max):27W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK+
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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