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SIHD12N50E-GE3

SIHD12N50E-GE3

MOSFET N-CH 550V 10.5A DPAK

SIHD12N50E-GE3

SIHD12N50E-GE3

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Part No :

SIHD12N50E-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 550V 10.5A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12153 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
SIHD12N50E-GE3 PDF
Type Description
Series:E
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):550 V
Current - Continuous Drain (Id) @ 25°C:10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:886 pF @ 100 V
FET Feature:-
Power Dissipation (Max):114W (Tc)
Operating Temperature:-55°C ~ 150°C (TA)
Mounting Type:Surface Mount
Supplier Device Package:D-PAK (TO-252AA)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
SIHD12N50E-GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SIHD12N50E-GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SIHD12N50E-GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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