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NTE2399

NTE2399

MOSFET N-CHANNEL 1KV 3.1A TO220

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NTE2399

NTE2399

Image is for reference, please contact us to get the real picture

Part No :

NTE2399

Manufacturer
NTE Electronics, Inc.
Description
MOSFET N-CHANNEL 1KV 3.1A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10252 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
Type Description
Series:-
Package:Bag
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1 kV
Current - Continuous Drain (Id) @ 25°C:3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:980 pF @ 25 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
NTE2399 is available at GangBo-ic.com, Please review product page below for detailed information, including NTE2399 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTE2399 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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