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RDD022N60TL

RDD022N60TL

MOSFET N-CH 600V 2A CPT3

RDD022N60TL

RDD022N60TL

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Part No :

RDD022N60TL

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 600V 2A CPT3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
274527 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
RDD022N60TL PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:4.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:175 pF @ 25 V
FET Feature:-
Power Dissipation (Max):20W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:CPT3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
RDD022N60TL is available at GangBo-ic.com, Please review product page below for detailed information, including RDD022N60TL price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RDD022N60TL to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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